Includes bibliographical references and index.
|Statement||Edwin S. Oxner.|
|Series||Electrical engineering and electronics|
|LC Classifications||TK7871.95 .O95 1989|
|The Physical Object|
|Pagination||ix, 268 p. :|
|Number of Pages||268|
FET Technology and Application: An Introduction (Electrical and Engineering and Electronics, Vol 54) [Edwin S. Oxner] on *FREE* shipping on qualifying offers. FET Technology and Application: An Introduction (Electrical and Engineering and Electronics, Vol 54)Format: Hardcover. The field effect transistor, FET is a key electronic component using within many areas of the electronics industry. The FET used in many circuits constructed from discrete electronic components in areas from RF technology to power control and electronic switching to general amplification. ISBN: OCLC Number: Description: ix, pages: illustrations ; 24 cm. Contents: 1. Identifying the Family of FETs 2. Buy Fet Technology and Application by E S Oxner online at Alibris. We have new and used copies available, in 1 editions - starting at $ Shop now.
FET Circuit Applications AN National Semiconductor Application Note 32 February FET Circuit Applications *Polycarbonate dielectric TL/H/–1 Sample and Hold With Offset Adjustment The 2N JFET was selected because of its low lGSS (k pA), very-low lD(OFF) (k50 pA) and low pinchoff Size: KB. Read FET Technology and Application: An Introduction (Electrical and Engineering and Electronics. Ebooks list page: ; [PDF] FET Technology and Application: An Introduction (Electrical and Engineering and Electronics, Vol 54); The Doctrine And Application Of Fluxions, Part 1 (); Science and Technology and the Future Development of Societies: International Workshop Proceedings; Blockchain Technology and Application: Second CCF China. The application of modern technology represents a significant advance in contemporary English language teaching methods. Indeed, Mohammad Reza Ahmadi () maintains that electronic teaching.
National Office Address: Struben Street, Pretoria Call Centre: | [email protected] Switchboard: Certification [email protected] Figure 2 illustrates the basic construction and operating principles of a simple n-channel JFET. It consists of a bar of n-type semiconductor material with a drain terminal at one end and a source terminal at the other. A p-type control electrode or gate surrounds (and is joined to the surface of) the middle section of the n-type bar, thus forming a p-n junction. The FET has three electrodes: Source: The Source is the electrode on the FET through which the majority carriers enter the channel, i.e. at acts as the source of carriers for the device. Current entering the channel through the source is designated by IS. Drain: The Drain is the FET electrode through which the majority carriers leave the channel, i.e. they are drained from the channel. Via Afrika Computer Applications Technology Grade 10 Learner’s Book; Welcome to our online shop. More products. Via Afrika Computer Applications Technology Grade 10 Learner’s Book. R Full colour A4 textbook. Beautiful design and illustrations that enhance the content. Via Afrika Computer Applications Technology Grade 11 Teacher.